| PART |
Description |
Maker |
| MX29VL033MBTI-90G MX29VL033MTMC-90R MX29VL033MBMI- |
128M-BIT SINGLE VOLTAGE 3V ONLY UNIFORM SECTOR FLASH MEMORY 128兆位单电V时仅均匀部门闪存
|
Macronix International Co., Ltd.
|
| MX23L12854 |
128M-BIT Low Voltage / Serial Mask ROM Memory with 50MHz SPI Bus Interface
|
Macronix International
|
| K9K4G08U1M K9F2G16U0M K9F2G08U0M |
256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K9K4G08U1M |
256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory
|
SAMSUNG
|
| AD5344 AD5340BRU AD5341 AD5330 AD5331 AD5331BRU AD |
Dual 12-bit 65MSPS ADC with serialized LVDS Output 48-VQFN -40 to 85
2.5 V to 5.5 V/ 115 uA/ Parallel Interface Single Voltage-Output 8-/10-/12-Bit DACs
2.5 V to 5.5 V, 115 uA, Parallel Interface Single Voltage-Output 8-/10-/12-Bit DACs PARALLEL, WORD INPUT LOADING, 7 us SETTLING TIME, 10-BIT DAC, PDSO20
2.5 V to 5.5 V, 115 uA, Parallel Interface Single Voltage-Output 8-/10-/12-Bit DACs 2.5 V.5 V15微安，并行接口单电压输出DAC-/10-/12-Bit
2.5 V to 5.5 V, 115 uA, Parallel Interface Single Voltage-Output 8-/10-/12-Bit DACs PARALLEL, WORD INPUT LOADING, 8 us SETTLING TIME, 12-BIT DAC, PDSO20
|
Analog Devices, Inc.
|
| UPD45128163G5-A75-9JF UPD45128841G5-A10B-9JF UPD45 |
128M-bit Synchronous DRAM 4-bank/ LVTTL
OSCILLATORS 100PPM -20 70 3.3V 4 18.432MHZ PD HCMOS 5X7MM 4PAD SMD 128兆位同步DRAM 4银行，LVTTL
128M-bit Synchronous DRAM 4-bank, LVTTL 128兆位同步DRAM 4银行，LVTTL
|
NEC Corp.
NEC, Corp.
|
| K9F1G08D0M K9F1G16D0M K9F1G08U0M-YCB00 |
Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TV07; Number of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Body Style:Straight
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
128M X 8 FLASH 2.7V PROM, 30 ns, PDSO48
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MC-4R256FKE8S-840 |
Direct Rambus DRAM SO-RIMM Module 256M-BYTE (128M-WORD x 18-BIT) 128M X 18 DIRECT RAMBUS DRAM MODULE, DMA160
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| K9K1G08U0A K9K1G08U0A1 K9K1G16U0A K9K1G08Q0A K9K1G |
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K847PH K827P8 K827PH K817P K817P1 K817P2 K817P3 K8 |
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
From old datasheet system
Optocoupler with Phototransistor Output
XTAL MTL T/H HC49/U
|
Samsung Electronic
TFUNK
Vishay Telefunken
Vishay Intertechnology,Inc.
|
| MC-4R256CPE6C-845 MC-4R256CPE6C MC-4R256CPE6C-653 |
Direct Rambus DRAM RIMM Module 256M-BYTE 128M-WORD x 16-BIT
128M X 16 DIRECT RAMBUS DRAM MODULE, 45 ns, DMA184 RIMM-184
|
http://
NEC[NEC]
NEC Corp.
Performance Semiconductor, Corp.
|
| UPD45128163G5-A75L-9JF UPD45128841G5-A75L-9JF UPD4 |
128M-bit Synchronous DRAM 4-bank/ LVTTL
128M-bit Synchronous DRAM 4-bank, LVTTL 16M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
|
Elpida Memory, Inc.
ELPIDA MEMORY INC
|
